1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. onsemi
  6. FDS86267P

FDS86267P

Download Datasheet Request Quote

Note : Your request will be directed to onsemi.

FDS86267P Image

The FDS86267P from onsemi is a MOSFET with Continous Drain Current -2.2 A, Drain Source Resistance 255 milliohm, Drain Source Breakdown Voltage -150 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage -4 V. Tags: Surface Mount. More details for FDS86267P can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FDS86267P
  • Manufacturer
    onsemi
  • Description
    -25 to 25 V, 2.5 W, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2.2 A
  • Drain Source Resistance
    255 milliohm
  • Drain Source Breakdown Voltage
    -150 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    -4 V
  • Gate Charge
    11 to 16 nC
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOIC-8
  • Applications
    Active Clamp switch, Load switch

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products