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FDS8949

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FDS8949 Image

The FDS8949 from onsemi is a MOSFET with Continous Drain Current 6 A, Drain Source Resistance 29 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 3 V. Tags: Surface Mount. More details for FDS8949 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDS8949
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 2 W, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    6 A
  • Drain Source Resistance
    29 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    3 V
  • Gate Charge
    3 to 6 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOIC-8
  • Applications
    Inverter, Power Supplies

Technical Documents
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