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FDS8958A

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FDS8958A Image

The FDS8958A from onsemi is a MOSFET with Continous Drain Current 5 to 7 A, Drain Source Resistance 28 to 52 milliohm, Drain Source Breakdown Voltage -30 to 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3 to 3 V. Tags: Surface Mount. More details for FDS8958A can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDS8958A
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 2 W, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    5 to 7 A
  • Drain Source Resistance
    28 to 52 milliohm
  • Drain Source Breakdown Voltage
    -30 to 30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -3 to 3 V
  • Gate Charge
    9.6 to 16 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOIC-8

Technical Documents
View details on the manufacturer's website
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