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FDT4N50NZU

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FDT4N50NZU Image

The FDT4N50NZU from onsemi is a MOSFET with Continous Drain Current 1.2 to 2 A, Drain Source Resistance 2.42 to 3 milliohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage 25 V, Gate Source Threshold Voltage 3.5 to 5.5 V. Tags: Through Hole. More details for FDT4N50NZU can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDT4N50NZU
  • Manufacturer
    onsemi
  • Description
    25 V, Single, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.2 to 2 A
  • Drain Source Resistance
    2.42 to 3 milliohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    25 V
  • Gate Source Threshold Voltage
    3.5 to 5.5 V
  • Gate Charge
    9.1 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    SOT-223
  • Applications
    Computing / Display Power Supplies, Industrial Power Supplies, Consumer Power Supplies

Technical Documents
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