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FDT86106LZ

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FDT86106LZ Image

The FDT86106LZ from onsemi is a MOSFET with Continous Drain Current 3.2 A, Drain Source Resistance 108 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.2 V. Tags: Surface Mount. More details for FDT86106LZ can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDT86106LZ
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 2.2 W, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.2 A
  • Drain Source Resistance
    108 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.2 V
  • Gate Charge
    2.4 to 7 nC
  • Power Dissipation
    2.2 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-223-4 / TO-261-4
  • Applications
    DC/DC conversion

Technical Documents
View details on the manufacturer's website
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