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FDY1002PZ

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FDY1002PZ Image

The FDY1002PZ from onsemi is a MOSFET with Continous Drain Current -0.83 A, Drain Source Resistance 280 to 1800 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1 to -0.4 V. Tags: Surface Mount. More details for FDY1002PZ can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDY1002PZ
  • Manufacturer
    onsemi
  • Description
    -20 V, 2.2 to 3.1 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -0.83 A
  • Drain Source Resistance
    280 to 1800 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1 to -0.4 V
  • Gate Charge
    2.2 to 3.1 nC
  • Power Dissipation
    0.625 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    SOT-563
  • Applications
    Li-Ion Battery Pack

Technical Documents
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