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FQB12P20TM

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The FQB12P20TM from onsemi is a MOSFET with Continous Drain Current -11.5 A, Drain Source Resistance 360 to 470 milliohm, Drain Source Breakdown Voltage -200 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage -5 to -3 V. Tags: Surface Mount. More details for FQB12P20TM can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQB12P20TM
  • Manufacturer
    onsemi
  • Description
    -200 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -11.5 A
  • Drain Source Resistance
    360 to 470 milliohm
  • Drain Source Breakdown Voltage
    -200 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    -5 to -3 V
  • Gate Charge
    31 to 40 nC
  • Power Dissipation
    120 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK-3 (TO-263, 3-LEAD)
  • Applications
    Other Industrial use

Technical Documents
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