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FQB27N25TM-F085P

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The FQB27N25TM-F085P from onsemi is a MOSFET with Continous Drain Current 25.5 A, Drain Source Resistance 106 to 310 milli-ohm, Drain Source Breakdown Voltage 250 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Surface Mount. More details for FQB27N25TM-F085P can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQB27N25TM-F085P
  • Manufacturer
    onsemi
  • Description
    250 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    25.5 A
  • Drain Source Resistance
    106 to 310 milli-ohm
  • Drain Source Breakdown Voltage
    250 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    45 to 49 nC
  • Power Dissipation
    417 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-263AB
  • Applications
    Automotive Engine Control, Powertrain Management, Solenoid and Motor Drivers, Electronic Steering, Integrated Starter/Alternator, Distributed Power Architectures and VRM, Primary Switch for 12V Systems

Technical Documents
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