1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. onsemi
  6. FQB50N06L

FQB50N06L

Download Datasheet Request Quote

Note : Your request will be directed to onsemi.

FQB50N06L Image

The FQB50N06L from onsemi is a MOSFET with Continous Drain Current 52.4 A, Drain Source Resistance 17 to 25 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for FQB50N06L can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FQB50N06L
  • Manufacturer
    onsemi
  • Description
    60 V, 24.5 to 32 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    52.4 A
  • Drain Source Resistance
    17 to 25 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    24.5 to 32 nC
  • Power Dissipation
    121 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    D2PAK

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products