1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. onsemi
  6. FQD11P06TM

FQD11P06TM

Download Datasheet Request Quote

Note : Your request will be directed to onsemi.

The FQD11P06TM from onsemi is a MOSFET with Continous Drain Current -9.4 A, Drain Source Resistance 150 to 185 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage -4 to -2 V. Tags: Surface Mount. More details for FQD11P06TM can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FQD11P06TM
  • Manufacturer
    onsemi
  • Description
    -60 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -9.4 A
  • Drain Source Resistance
    150 to 185 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    -4 to -2 V
  • Gate Charge
    13 to 17 nC
  • Power Dissipation
    38 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK
  • Applications
    LCD TV, LED TV

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products