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FQD13N06

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FQD13N06 Image

The FQD13N06 from onsemi is a MOSFET with Continous Drain Current 10 A, Drain Source Resistance 110 to 140 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for FQD13N06 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQD13N06
  • Manufacturer
    onsemi
  • Description
    60 V, 5.8 to 7.5 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    10 A
  • Drain Source Resistance
    110 to 140 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    5.8 to 7.5 nC
  • Power Dissipation
    28 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    DPAK

Technical Documents
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