1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. onsemi
  6. FQD13N10TM

FQD13N10TM

Download Datasheet Request Quote

Note : Your request will be directed to onsemi.

The FQD13N10TM from onsemi is a MOSFET with Continous Drain Current 10 A, Drain Source Resistance 142 to 180 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for FQD13N10TM can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FQD13N10TM
  • Manufacturer
    onsemi
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    10 A
  • Drain Source Resistance
    142 to 180 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    12 to 16 nC
  • Power Dissipation
    40 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D-PAK
  • Applications
    Switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products