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FQD16N25CTM

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The FQD16N25CTM from onsemi is a MOSFET with Continous Drain Current 16 A, Drain Source Resistance 220 to 270 milli-ohm, Drain Source Breakdown Voltage 250 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for FQD16N25CTM can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQD16N25CTM
  • Manufacturer
    onsemi
  • Description
    250 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    16 A
  • Drain Source Resistance
    220 to 270 milli-ohm
  • Drain Source Breakdown Voltage
    250 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    41 to 53.5 nC
  • Power Dissipation
    160 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D-PAK
  • Applications
    LCD TV, PDP TV, LED TV

Technical Documents
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