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FQD19N10LTM

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The FQD19N10LTM from onsemi is a MOSFET with Continous Drain Current 15.6 A, Drain Source Resistance 74 to 110 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2 V. Tags: Surface Mount. More details for FQD19N10LTM can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQD19N10LTM
  • Manufacturer
    onsemi
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    15.6 A
  • Drain Source Resistance
    74 to 110 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2 V
  • Gate Charge
    14 to 18 nC
  • Power Dissipation
    50 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D-PAK
  • Applications
    Switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications

Technical Documents
View details on the manufacturer's website
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