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FQD1N60C

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FQD1N60C Image

The FQD1N60C from onsemi is a MOSFET with Continous Drain Current 1 A, Drain Source Resistance 9300 to 11500 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for FQD1N60C can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQD1N60C
  • Manufacturer
    onsemi
  • Description
    600 V, 4.8 to 6.5 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1 A
  • Drain Source Resistance
    9300 to 11500 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    4.8 to 6.5 nC
  • Power Dissipation
    28 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK

Technical Documents
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