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FQD1N80

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FQD1N80 Image

The FQD1N80 from onsemi is a MOSFET with Continous Drain Current 1 A, Drain Source Resistance 15500 to 20000 milliohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Surface Mount. More details for FQD1N80 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQD1N80
  • Manufacturer
    onsemi
  • Description
    800 V, 5.5 to 7.2 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1 A
  • Drain Source Resistance
    15500 to 20000 milliohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    5.5 to 7.2 nC
  • Power Dissipation
    45 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    DPAK

Technical Documents
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