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FQD30N06TM

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The FQD30N06TM from onsemi is a MOSFET with Continous Drain Current 22.7 A, Drain Source Resistance 36 to 45 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for FQD30N06TM can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQD30N06TM
  • Manufacturer
    onsemi
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    22.7 A
  • Drain Source Resistance
    36 to 45 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    19 to 25 nC
  • Power Dissipation
    44 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D-PAK
  • Applications
    Switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications

Technical Documents
View details on the manufacturer's website
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