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FQD4P40TM

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The FQD4P40TM from onsemi is a MOSFET with Continous Drain Current -2.7 A, Drain Source Resistance 2440 to 3100 milliohm, Drain Source Breakdown Voltage -400 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage -5 to -3 V. Tags: Surface Mount. More details for FQD4P40TM can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQD4P40TM
  • Manufacturer
    onsemi
  • Description
    -400 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2.7 A
  • Drain Source Resistance
    2440 to 3100 milliohm
  • Drain Source Breakdown Voltage
    -400 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    -5 to -3 V
  • Gate Charge
    18 to 23 nC
  • Power Dissipation
    50 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK

Technical Documents
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