The FQN1N60C from onsemi is a MOSFET with Continous Drain Current 0.3 A, Drain Source Resistance 9300 to 11500 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for FQN1N60C can be seen below.