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FQP13N06L

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FQP13N06L Image

The FQP13N06L from onsemi is a MOSFET with Continous Drain Current 13.6 A, Drain Source Resistance 88 to 140 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Through Hole. More details for FQP13N06L can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQP13N06L
  • Manufacturer
    onsemi
  • Description
    60 V, 4.8 to 6.4 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    13.6 A
  • Drain Source Resistance
    88 to 140 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    4.8 to 6.4 nC
  • Power Dissipation
    45 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-220-3

Technical Documents
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