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FQP13N10

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FQP13N10 Image

The FQP13N10 from onsemi is a MOSFET with Continous Drain Current 12.8 A, Drain Source Resistance 142 to 180 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for FQP13N10 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQP13N10
  • Manufacturer
    onsemi
  • Description
    100 V, 12 to 16 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    12.8 A
  • Drain Source Resistance
    142 to 180 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    12 to 16 nC
  • Power Dissipation
    65 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-220

Technical Documents
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