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FQP3P50

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The FQP3P50 from onsemi is a MOSFET with Continous Drain Current -2.7 A, Drain Source Resistance 3900 to 4900 milliohm, Drain Source Breakdown Voltage -500 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage -5 to -3 V. Tags: Through Hole. More details for FQP3P50 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQP3P50
  • Manufacturer
    onsemi
  • Description
    -500 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2.7 A
  • Drain Source Resistance
    3900 to 4900 milliohm
  • Drain Source Breakdown Voltage
    -500 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    -5 to -3 V
  • Gate Charge
    18 to 23 nC
  • Power Dissipation
    85 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220-3
  • Applications
    Lighting

Technical Documents
View details on the manufacturer's website
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