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FQPF3N80C

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The FQPF3N80C from onsemi is a MOSFET with Continous Drain Current 3 A, Drain Source Resistance 4000 to 4800 milliohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Through Hole. More details for FQPF3N80C can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQPF3N80C
  • Manufacturer
    onsemi
  • Description
    -30 to 30 V, 800 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3 A
  • Drain Source Resistance
    4000 to 4800 milliohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    13 to 16.5 nC
  • Power Dissipation
    39 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220F

Technical Documents
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