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FQPF6N80CT

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The FQPF6N80CT from onsemi is a MOSFET with Continous Drain Current 5.5 A, Drain Source Resistance 2100 to 2500 milliohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Through Hole. More details for FQPF6N80CT can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQPF6N80CT
  • Manufacturer
    onsemi
  • Description
    800 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5.5 A
  • Drain Source Resistance
    2100 to 2500 milliohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    21 to 30 nC
  • Power Dissipation
    51 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220F
  • Applications
    Other Industrial Use

Technical Documents
View details on the manufacturer's website
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