FQS4901

Note : Your request will be directed to onsemi.

The FQS4901 from onsemi is a MOSFET with Continous Drain Current 0.45 A, Drain Source Resistance 3200 to 4200 milliohm, Drain Source Breakdown Voltage 400 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for FQS4901 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQS4901
  • Manufacturer
    onsemi
  • Description
    -25 to 25 V, 400 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.45 A
  • Drain Source Resistance
    3200 to 4200 milliohm
  • Drain Source Breakdown Voltage
    400 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    5.8 to 7.5 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOIC-8

Technical Documents

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