The FQT1N60CTF-WS from onsemi is a MOSFET with Continous Drain Current 0.2 A, Drain Source Resistance 9300 to 11500 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for FQT1N60CTF-WS can be seen below.