1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. onsemi
  6. FQT1N80

FQT1N80

Download Datasheet Request Quote

Note : Your request will be directed to onsemi.

The FQT1N80 from onsemi is a MOSFET with Continous Drain Current 0.2 A, Drain Source Resistance 15500 to 20000 milliohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Surface Mount. More details for FQT1N80 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FQT1N80
  • Manufacturer
    onsemi
  • Description
    -30 to 30 V, 800 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.2 A
  • Drain Source Resistance
    15500 to 20000 milliohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    5.5 to 7.2 nC
  • Power Dissipation
    2.1 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-223

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products