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HUF75321D3ST

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The HUF75321D3ST from onsemi is a MOSFET with Continous Drain Current 20 A, Drain Source Resistance 30 to 36 milliohm, Drain Source Breakdown Voltage 55 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for HUF75321D3ST can be seen below.

Product Specifications

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Product Details

  • Part Number
    HUF75321D3ST
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 55 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    20 A
  • Drain Source Resistance
    30 to 36 milliohm
  • Drain Source Breakdown Voltage
    55 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    21 to 44 nC
  • Power Dissipation
    93 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252AA

Technical Documents
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