1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. onsemi
  6. HUF75321P3

HUF75321P3

Download Datasheet Request Quote

Note : Your request will be directed to onsemi.

The HUF75321P3 from onsemi is a MOSFET with Continous Drain Current 35 A, Drain Source Resistance 28 to 34 milliohm, Drain Source Breakdown Voltage 55 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for HUF75321P3 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    HUF75321P3
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 55 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    35 A
  • Drain Source Resistance
    28 to 34 milliohm
  • Drain Source Breakdown Voltage
    55 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    21 to 44 nC
  • Power Dissipation
    93 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220AB

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products