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HUF75639P3-F102

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The HUF75639P3-F102 from onsemi is a MOSFET with Continous Drain Current 56 A, Drain Source Resistance 21 to 25 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for HUF75639P3-F102 can be seen below.

Product Specifications

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Product Details

  • Part Number
    HUF75639P3-F102
  • Manufacturer
    onsemi
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    56 A
  • Drain Source Resistance
    21 to 25 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    57 to 130 nC
  • Power Dissipation
    200 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220-3
  • Applications
    AC-DC Merchant Power Supply - Servers & Workstations, Workstation, Server & Mainframe

Technical Documents
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