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HUF76629D3ST

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The HUF76629D3ST from onsemi is a MOSFET with Continous Drain Current 20 A, Drain Source Resistance 41 to 135 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -16 to 16 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for HUF76629D3ST can be seen below.

Product Specifications

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Product Details

  • Part Number
    HUF76629D3ST
  • Manufacturer
    onsemi
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    20 A
  • Drain Source Resistance
    41 to 135 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -16 to 16 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    39 to 43 nC
  • Power Dissipation
    150 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D-PAK(TO-252)
  • Applications
    Automotive Engine Control, Powertrain Management, Solenoid and Motor Drivers, Distributed Power Architectures and VRM, Primary Switch for 12V Systems

Technical Documents
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