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MMBF170LT1G

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The MMBF170LT1G from onsemi is a MOSFET with Continous Drain Current 0.5 A, Drain Source Resistance 5000 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.8 to 3 V. Tags: Surface Mount. More details for MMBF170LT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    MMBF170LT1G
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.5 A
  • Drain Source Resistance
    5000 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.8 to 3 V
  • Power Dissipation
    0.225 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    General Purpose application

Technical Documents
View details on the manufacturer's website
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