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MVSF2N02ELT1G

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The MVSF2N02ELT1G from onsemi is a MOSFET with Continous Drain Current 2.8 A, Drain Source Resistance 78 to 115 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.5 to 1 V. Tags: Surface Mount. More details for MVSF2N02ELT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    MVSF2N02ELT1G
  • Manufacturer
    onsemi
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.8 A
  • Drain Source Resistance
    78 to 115 milli-ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.5 to 1 V
  • Gate Charge
    0.6 to 3.5 nC
  • Power Dissipation
    1.25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23-3
  • Applications
    DC-DC Converters, Power Management in Portable and Battery Powered Products, ie: Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones

Technical Documents
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