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NDB5060L

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The NDB5060L from onsemi is a MOSFET with Continous Drain Current 26 A, Drain Source Resistance 42 to 80 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -16 to 16 V, Gate Source Threshold Voltage 1 to 2 V. Tags: Surface Mount. More details for NDB5060L can be seen below.

Product Specifications

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Product Details

  • Part Number
    NDB5060L
  • Manufacturer
    onsemi
  • Description
    -16 to 16 V, 60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    26 A
  • Drain Source Resistance
    42 to 80 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -16 to 16 V
  • Gate Source Threshold Voltage
    1 to 2 V
  • Gate Charge
    17 to 24 nC
  • Power Dissipation
    68 W
  • Temperature operating range
    -65 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-263AB
  • Applications
    General Purpose application

Technical Documents
View details on the manufacturer's website
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