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NDS0605-F169

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The NDS0605-F169 from onsemi is a MOSFET with Continous Drain Current -0.18 A, Drain Source Resistance 1000 to 10000 milli-ohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3 to -1 V. Tags: Surface Mount. More details for NDS0605-F169 can be seen below.

Product Specifications

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Product Details

  • Part Number
    NDS0605-F169
  • Manufacturer
    onsemi
  • Description
    -60 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -0.18 A
  • Drain Source Resistance
    1000 to 10000 milli-ohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -3 to -1 V
  • Gate Charge
    1.8 to 2.5 nC
  • Power Dissipation
    0.36 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23-3
  • Applications
    Low voltage applications

Technical Documents
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