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NDT451AN

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The NDT451AN from onsemi is a MOSFET with Continous Drain Current -7.2 to 7.2 A, Drain Source Resistance 30 to 90 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.7 to 3 V. Tags: Surface Mount. More details for NDT451AN can be seen below.

Product Specifications

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Product Details

  • Part Number
    NDT451AN
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -7.2 to 7.2 A
  • Drain Source Resistance
    30 to 90 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.7 to 3 V
  • Gate Charge
    19 to 30 nC
  • Power Dissipation
    3 W
  • Temperature operating range
    -65 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-223
  • Applications
    General Purpose application

Technical Documents
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