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NDT452AP

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The NDT452AP from onsemi is a MOSFET with Continous Drain Current -5 A, Drain Source Resistance 52 to 130 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.8 to -0.7 V. Tags: Surface Mount. More details for NDT452AP can be seen below.

Product Specifications

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Product Details

  • Part Number
    NDT452AP
  • Manufacturer
    onsemi
  • Description
    -30 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -5 A
  • Drain Source Resistance
    52 to 130 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.8 to -0.7 V
  • Gate Charge
    22 to 30 nC
  • Power Dissipation
    3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-223
  • Applications
    General Purpose applications

Technical Documents
View details on the manufacturer's website
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