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NTB004N10G

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The NTB004N10G from onsemi is a MOSFET with Continous Drain Current 201 A, Drain Source Resistance 3.4 to 6.82 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for NTB004N10G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTB004N10G
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    201 A
  • Drain Source Resistance
    3.4 to 6.82 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    175 nC
  • Power Dissipation
    340 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK
  • Applications
    Hot Swap in 48 V Systems

Technical Documents
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