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NTB25P06T4G

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The NTB25P06T4G from onsemi is a MOSFET with Continous Drain Current -27.5 A, Drain Source Resistance 65 to 82 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -15 to 15 V, Gate Source Threshold Voltage -4 to -2 V. Tags: Surface Mount. More details for NTB25P06T4G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTB25P06T4G
  • Manufacturer
    onsemi
  • Description
    -60 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -27.5 A
  • Drain Source Resistance
    65 to 82 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -15 to 15 V
  • Gate Source Threshold Voltage
    -4 to -2 V
  • Gate Charge
    33 to 50 nC
  • Power Dissipation
    120 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK
  • Applications
    PWM Motor Controls, Power Supplies, Converters, Bridge Circuits

Technical Documents
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