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NTBLS1D5N10MCTXG

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The NTBLS1D5N10MCTXG from onsemi is a MOSFET with Continous Drain Current 312 A, Drain Source Resistance 1200 to 1500 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for NTBLS1D5N10MCTXG can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTBLS1D5N10MCTXG
  • Manufacturer
    onsemi
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    312 A
  • Drain Source Resistance
    1200 to 1500 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    131 nC
  • Power Dissipation
    322 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    H-PSOF8L
  • Applications
    Power Tools, Battery Operated Vacuums, UAV/Drones, Material Handling, BMS/Storage, Home Automation

Technical Documents
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