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NTD20N06T4G

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The NTD20N06T4G from onsemi is a MOSFET with Continous Drain Current 20 A, Drain Source Resistance 37.5 to 46 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for NTD20N06T4G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTD20N06T4G
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    20 A
  • Drain Source Resistance
    37.5 to 46 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    7.3 to 30 nC
  • Power Dissipation
    60 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    Power Supplies, Converters, Power Motor Controls, Bridge Circuits

Technical Documents
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