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NTD4856N-35G

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The NTD4856N-35G from onsemi is a MOSFET with Continous Drain Current 13 to 89 A, Drain Source Resistance 3.9 to 6.8 milli-ohm, Drain Source Breakdown Voltage 25 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.45 to 2.5 V. Tags: Through Hole. More details for NTD4856N-35G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTD4856N-35G
  • Manufacturer
    onsemi
  • Description
    25 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    13 to 89 A
  • Drain Source Resistance
    3.9 to 6.8 milli-ohm
  • Drain Source Breakdown Voltage
    25 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.45 to 2.5 V
  • Gate Charge
    38 nC
  • Power Dissipation
    60 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    IPAK
  • Applications
    VCORE Applications, DC-DC Converters, Low Side Switching

Technical Documents
View details on the manufacturer's website
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