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NTD6415ANLT4G

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The NTD6415ANLT4G from onsemi is a MOSFET with Continous Drain Current 23 A, Drain Source Resistance 44 to 52 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2 V. Tags: Surface Mount. More details for NTD6415ANLT4G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTD6415ANLT4G
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    23 A
  • Drain Source Resistance
    44 to 52 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2 V
  • Gate Charge
    20 nC
  • Power Dissipation
    83 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    Direct Fuel Injection, Motor Drive, DC-DC Conversion

Technical Documents
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