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NTF2955T1G

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The NTF2955T1G from onsemi is a MOSFET with Continous Drain Current -2.6 A, Drain Source Resistance 145 to 185 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -4 to -2 V. Tags: Surface Mount. More details for NTF2955T1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTF2955T1G
  • Manufacturer
    onsemi
  • Description
    -60 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2.6 A
  • Drain Source Resistance
    145 to 185 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -4 to -2 V
  • Gate Charge
    14.3 nC
  • Power Dissipation
    2.3 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-223
  • Applications
    Power Supplies, PWM Motor Control, Converters, Power Management

Technical Documents
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