1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. onsemi
  6. NTGD3148NT1G

NTGD3148NT1G

Download Datasheet Request Quote

Note : Your request will be directed to onsemi.

The NTGD3148NT1G from onsemi is a MOSFET with Continous Drain Current 3.5 A, Drain Source Resistance 41.7 to 100 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.5 to 1.5 V. Tags: Surface Mount. More details for NTGD3148NT1G can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    NTGD3148NT1G
  • Manufacturer
    onsemi
  • Description
    -12 to 12 V, 20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    3.5 A
  • Drain Source Resistance
    41.7 to 100 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.5 to 1.5 V
  • Gate Charge
    3.8 nC
  • Power Dissipation
    1.1 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSOP-6
  • Applications
    DC-DC Converters (Buck and Boost Circuits), Low Side Load Switch, Optimized for Battery and Load Management Applications in Portable Equipment Like Cell Phones, DSCs, Media Player, Battery Charging and Protection Circuits

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products