1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. onsemi
  6. NTGD4167C

NTGD4167C

Download Datasheet Request Quote

Note : Your request will be directed to onsemi.

The NTGD4167C from onsemi is a MOSFET with Continous Drain Current -1.9 to 2.6 A, Drain Source Resistance 67 to 300 milliohm, Drain Source Breakdown Voltage -30 to 30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.5 to 1.5 V. Tags: Surface Mount. More details for NTGD4167C can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    NTGD4167C
  • Manufacturer
    onsemi
  • Description
    -30 to 30 V, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -1.9 to 2.6 A
  • Drain Source Resistance
    67 to 300 milliohm
  • Drain Source Breakdown Voltage
    -30 to 30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.5 to 1.5 V
  • Gate Charge
    3.7 to 6 nC
  • Power Dissipation
    0.9 to 1.1 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSOP-6
  • Applications
    DC-DC Conversion Circuits, Load/Power Switching with Level Shift

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products