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NTGS3441T1G

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The NTGS3441T1G from onsemi is a MOSFET with Continous Drain Current -3.3 A, Drain Source Resistance 69 to 135 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1.5 to -0.45 V. Tags: Surface Mount. More details for NTGS3441T1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTGS3441T1G
  • Manufacturer
    onsemi
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -3.3 A
  • Drain Source Resistance
    69 to 135 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1.5 to -0.45 V
  • Gate Charge
    6.2 to 14 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSOP-6
  • Applications
    Power Management in Portable and Battery-Powered Products, i.e.: Cellular and Cordless Telephones, and PCMCIA Cards

Technical Documents
View details on the manufacturer's website
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