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NTGS4111PT1G

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The NTGS4111PT1G from onsemi is a MOSFET with Continous Drain Current -4.7 A, Drain Source Resistance 38 to 110 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3 to -1 V. Tags: Surface Mount. More details for NTGS4111PT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTGS4111PT1G
  • Manufacturer
    onsemi
  • Description
    -30 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -4.7 A
  • Drain Source Resistance
    38 to 110 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -3 to -1 V
  • Gate Charge
    15.25 to 32 nC
  • Power Dissipation
    1.25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSOP-6
  • Applications
    Battery Management and Switching, Load Switching, Battery Protection

Technical Documents
View details on the manufacturer's website
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