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NTHD3101FT3

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The NTHD3101FT3 from onsemi is a MOSFET with Continous Drain Current -4.4 A, Drain Source Resistance 64 to 170 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1.5 to -0.45 V. Tags: Surface Mount. More details for NTHD3101FT3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTHD3101FT3
  • Manufacturer
    onsemi
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -4.4 A
  • Drain Source Resistance
    64 to 170 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1.5 to -0.45 V
  • Gate Charge
    7.4 nC
  • Power Dissipation
    2.1 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    ChipFET-8
  • Applications
    Li-Ion Battery Charging, High Side DC-DC Conversion Circuits, High Side Drive for Small Brushless DC Motors, Power Management in Portable, Battery Powered Products

Technical Documents
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