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NTHD4102PT1G

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The NTHD4102PT1G from onsemi is a MOSFET with Continous Drain Current -4.1 A, Drain Source Resistance 64 to 170 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1.5 to -0.45 V. Tags: Surface Mount. More details for NTHD4102PT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTHD4102PT1G
  • Manufacturer
    onsemi
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -4.1 A
  • Drain Source Resistance
    64 to 170 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1.5 to -0.45 V
  • Gate Charge
    7.6 to 8.6 nC
  • Power Dissipation
    2.1 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    ChipFET-8
  • Applications
    Optimized for Battery and Load Management Applications in Portable Equipment such as MP3 Players, Cell Phones, and PDAs, Charge Control in Battery Chargers, Buck and Boost Converters

Technical Documents
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